SiC MOSFETs (Silicon Carbide MOS Field Effect Tubes) have many advantages over Si MOSFETs (Silicon MOS Field Effect Tubes):

High voltage stability: SiC MOSFETs have a peak repetitive recovery voltage of up to 1,200 V, which is several times higher than Si MOSFETs. This makes them more suitable for high-voltage applications.

High efficiency: SiC MOSFETs have lower leakage currents and higher efficiencies, which reduce system power losses.

High temperature durability: SiC MOSFETs have higher temperature durability and can operate in high temperature environments.

Fast Response: SiC MOSFETs have a faster response time, making them more efficient in high frequency applications.

High Reliability: SiC MOSFETs have higher reliability because they are more stable and less susceptible to damage.

Overall, SiC MOSFETs offer higher efficiency, reliability, and durability, making them the preferred choice for high-voltage, high-temperature, and high-frequency applications.