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Silicon carbide Schottky diode

SiC MOSFETs

Bare die

All-SiC power module

Hybrid silicon carbide module

Customized specifications

Silicon carbide Schottky diode

Schottky diode, a semiconductor device made based on the fact that the contact barrier is formed between metal and N-type semiconductor, has the feature of rectification. The basic structure of Schottky diode is constituted by heavily-doped N-type 4H-SiC wafer, 4H SiC epitaxy layer, Schottky contact layer and Ohmic contact layer.

SiC MOSFETs

In terms of the development and application of silicon carbide MOSFET (SiC MOSFET), the on-resistance and switching loss of SiC MOSFET are significantly reduced compared with those of Si IGBT with the same power level. As a result of its operating characteristics, it can be used for higher operating frequency and higher operating temperature.

Bare die

Bare die, usually exists in wafer form or die form., It is a basic component of semiconductor devices to form integrated circuits or more complex circuits (hybrid circuits) after packaging.

All-SiC power module

The automobile-grade all-SiC power modules are a series of power module products launched for the application requirements of the main inverters of new-energy vehicles, including half-bridge MOSFET modules, three-phase full-bridge MOSFET modules and plastic encapsulated single-sided heat dissipation half-bridge MOSFET modules. Due to the adoption of the latest silicon carbide MOSFET design and production process progress such as silver sintering technology, the comprehensive performance of the modules has reached the international advanced level, and by improving the conversion efficiency of the power system inverter, the energy efficiency and range of new-energy vehicles have been improved.

Hybrid silicon carbide module

As the third-generation semiconductor material, SiC (silicon carbide) materials have the characteristics of high junction temperature, high critical breakdown voltage and high thermal conductivity. Therefore, SiC material is beneficial to realizing the miniaturization of power modules and improving the high-temperature performance of power modules.

Customized specifications

With a complete 4/6-inch production process line, the outsourcing cooperative factory is equipped with a full set of process equipment such as silicon carbide epitaxy, high-temperature ion implantation, high-temperature annealing, and high-temperature oxidation, which can provide complete device production or customization of partial process steps.

Application fields

New energy vehicle

At present, China has gradually stepped into the era of new energy vehicles. To meet the demand for high output power, the power semiconductor device materials have been changed from silicon-based IGBT to silicon carbide MOSFET, the voltage platform has been upgraded from 400V to 800V, and the demand for power semiconductor devices carried has also increased significantly. The application scenarios of silicon carbide power devices in new energy vehicles include the main drive inverter, OBC (on-board charger), fast charging pile, and high-power DC/DC. The application of silicon carbide in 800V main motor controllers has become a general trend.

Charging pile

Some new technical directions of charging piles also emerged, such as high-power (such as 30kW and above) to achieve fast charging of electric vehicles, bidirectional charging function to achieve energy feedback, higher and wider output voltage range (such as 200V-750V or even to 1000V) to cover a variety of different new energy vehicle batteries, etc., these new technological development directions also provide huge application opportunities for silicon carbide semiconductors.

Wind/PV power generation

Silicon carbide power devices are designed dedicatedly according to the applications of high-power modules such as photovoltaic inverters, UPS equipment and wind power motor drivers to achieve smaller size, lower material cost and higher efficiency. The average efficiency of SiC-based inverters can be increased to 97.5%, which is equivalent to reducing the inverter losses by 25%. SiC-based inverters can increase conversion efficiency by 20% in wind power generation. Source: www.cnpowder.com.cn

High-efficiency power supply

SiC power devices can provide higher levels of power conversion efficiency than Si power devices, mainly due to significantly reduced energy loss and reverse charge loss. This results in more switching power and less energy during the switch on and off phases. Lower heat loss also eliminates cooling systems, reducing space, weight, and infrastructure costs. As IoT and AI applications continue to be deployed and moved to the cloud, improving the efficiency of managing energy-intensive IT infrastructure will become increasingly important.

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Qingdao JZ LEAPSiC Semiconductor Co.,Ltd., founded in 2021 and located in Smart Park, Jiazhan Zhigu, Qingdao, is committed to the research, development and production of the third-generation wide band gap semiconductor power devices and power modules. With cutting-edge technologies for auto-grade silicon carbide MOSFETs and diodes, and profound design and process research and development capabilities with full intellectual properties, the company has broken through the monopoly of foreign leading manufacturers on silicon carbide technology and become an outstanding enterprise in the silicon carbide power semiconductor industry in Greater China.

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