In order to meet the market demand for silicon carbide devices with higher voltage, higher efficiency and higher power density, Qingdao JZ LEAPSiC Semiconductor Co., Ltd. has recently developed a 1200V/20A silicon carbide Schottky diode iteratively, and the samples have successfully completed a series of stringent development and testing processes.

As an outstanding representative of the new generation of power semiconductor devices, the silicon carbide Schottky diode, with its excellent high-temperature resistance, high frequency and low loss characteristics, shows great potential in photovoltaic, smart grid, energy storage, charging, and many other demanding application scenarios.

The results show that the samples have reached the industry leading level in all key indicators, especially in high temperature performance is particularly outstanding, fully verified its excellent product quality and wide range of application potential, can support single-phase or three-phase PFC and isolation or non-isolated DC-DC circuits in the application of the samples, to demonstrate its excellent efficiency characteristics, to meet the needs of medium and high-voltage systems.